| PART |
Description |
Maker |
| EFG14G EFG15E |
3 PHASE, 170 A, 1400 V, SILICON, RECTIFIER DIODE
3 PHASE, 170 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
CRYDOM CORP
|
| FT500DL FT500DL-24 FT500DL-4 FT500DL-20 FT500DL-16 |
Phase control SCR. 500A, 400V.
Phase Control SCR 500 Amperes Avg 200-1400 Volts
Phase control SCR. 500A, 1200V.
Phase control SCR. 500A, 200V.
Phase control SCR. 500A, 1000V.
Phase control SCR. 500A, 800V.
Phase control SCR. 500A, 300V.
Phase control SCR. 500A, 500V.
Phase control SCR. 500A, 600V.
Phase control SCR. 500A, 1400V.
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| MA40053-54 |
SILICO SCHOTTKY DETECTOR DIODE
|
Advanced Semiconductor
|
| VUO30-14NO3 VUO30-18NO3 VUO30 VUO30-08NO3 VUO30-12 |
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| QRS1450001 |
Fast Recovery Diode Module (500 Amps/1400 Volts) 250 A, 1400 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V，N通道SOT3封装的功率MOSFET)
TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
| ST3230C18R0 ST3230C10R0 ST3230C16R0 ST3230C14R0 ST |
Silicon Controlled Rectifier, 5970 A, 1400 V, SCR, RPUK-2
1800V 2785A Phase Control SCR in a A-36 (R-Puk) package
1000V 2785A Phase Control SCR in a A-36 (R-Puk) package
1600V 2785A Phase Control SCR in a A-36 (R-Puk) package
Stratix II GX FPGA 30K FPGA-780 1600V 2785A可控硅相位控制在 36（注册商标，北辰）封
1200V 2785A Phase Control SCR in a A-36 (R-Puk) package
|
Vishay Semiconductors
International Rectifier
|
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 110MT120KPBF 110MT140KPBF |
3 PHASE, 110 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
|
VISHAY INTERTECHNOLOGY INC
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
|
